Invention Summary:
Rutgers Researchers have developed a method to grow a large scale of high quality single crystalline In2Se3 thin film using a temporal seed of Bi2Se3. This technology can be used in fabricating high quality In2Se3-incorporated devices, such as low-defect-density Bi2Se3, an archetypical 3D topological insulator.
Interfacial and bulk defects have remained the major obstacles for further progress in the field of topological insulators (TI) since their discovery. To realize the functional TI devices for application in quantum computer and spintronics, a defect-suppressed TI thin film is in demand.
The new technique using temporal seed of Bi2Se3 as template coupled with a growth engineering technique can create high crystalline In2Se3 layer with any desired thickness. Using this technique, researchers have obtained the defect-suppressed TI thin film of Bi2Se3 with record low carrier density and high mobility.
Market Applications:
- Photoelectrochemical applications
- Next generation sensors and detectors
- Non-volatile phase-change memory
- Ionic batteries and energy storage
- Solar cells
- Thermoelectric applications
Advantages:
- The first successful growth of high quality insulating single crystalline In2Se3 thin films in large scale.
- Significantly lowers material defects and results in high quality Bi2Se3 with record low carrier density and high mobility.
- Can be further extended to growth of other TI systems to enhance the TI performance and applicability.
Intellectual Property & Development Status:
Patent pending. Available for licensing and/or research collaboration.
